Near-infrared optical absorption in GaN/AlN quantum wells grown by molecular-beam epitaxy

Optical transitions in GaN/Al x Ga1x N multiple quantum wells grown by molecular beam epitaxy

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...

In-situ Determination of Indium Segregation in InGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

The surface segregation of indium atoms during the growth of InGaAs/GaAs heterostructures has been investigated in situ by re ection high-energy electron di raction (RHEED). We pointed out that the strong damping of the RHEED oscillations during the deposition of InGaAs on GaAs was related to the segregation strength of indium atoms in the InGaAs layer. A simple model shows that the decay const...

Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy

In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental ...

Photoluminescence and bowing parameters of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy

Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conductio...